1/5 tpdv640 ---> tpdv1240 ? september 2001 - ed: 1a alternistors n high commutation: > 142a/ms (400hz) n insulating voltage = 2500v (rms) (ul recognized: eb81734) n high voltage capability: v drm = 1200v features the tpdv640 ---> tpdv1240 use a high perfor- mance passivated glass alternistor technology. featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, trans- former...) description a1 a2 g top3 symbol parameter value unit i t(rms) rms on-state current (360 conduction angle) tc = 75 c40 a i tsm non repetitive surge peak on-state current (tj initial = 25 c) tp = 2.5ms 590 a tp = 8.3ms 370 tp = 10ms 350 i 2 ti 2 t value tp = 10ms 610 a 2 s di/dt critical rate of rise of on-state current gate supply: i g = 500ma di g /dt = 1a/ m s repetitive f = 50hz 20 a/ m s non repetitive 100 tstg tj storage and operating junction temperature range -40 to +150 -40 to +125 c tl maximum lead soldering temperature during 10s at 4.5mm from case 260 c absolute ratings (limiting values) symbol parameter tpdv unit 640 840 1040 1240 v drm v rrm repetitive peak off-state voltage tj = 125 c 600 800 1000 1200 v a1 a2 g
tpdv640 ---> tpdv1240 2/5 symbol parameter value unit rth (j-a) contact to ambient 50 c/w rth (j-c) dc junction to case for dc 1.2 c/w rth (j-c) ac junction to case for 360 conduction angle (f = 50hz) 0.9 c/w gate characteristics (maximum values) p g(av) =1w p gm = 40w (tp = 20 m s) i gm =8a(tp=20 m s) v gm = 16v (tp = 20 m s) thermal resistances symbol test conditions quadrant value unit i gt v d = 12v (dc) r l =33 w tj = 25 c i - ii - iii max. 200 ma v gt v d = 12v (dc) r l =33 w tj = 25 c i - ii - iii max. 1.5 v v gd v d =v drm r l = 3.3k w tj =125 c i - ii - iii min. 0.2 v tgt v d =v drm i g = 500ma di g /dt = 3a/ m s tj = 25 c i - ii - iii typ. 2.5 m s i l i g = 1.2i gt tj = 25 c i - iii typ. 100 ma ii 200 i h *i t = 500ma gate open tj = 25 c typ. 50 ma v tm *i tm = 60a tp = 380 m stj=25 c max. 1.8 v i drm i rrm v drm rated v rrm rated tj = 25 c max. 0.02 ma tj = 125 c max. 8 dv/dt * linear slope up to v d = 67% v drm gate open tj = 125 c min. 500 v/ m s (di/dt)c* (dv/dt)c = 200v/ m s tj = 125 c min. 35 a/ms (dv/dt)c = 10v/ m s 142 * for either polarity of electrode a 2 voltage with reference to electrode a 1 . electrical characteristics
tpdv640 ---> tpdv1240 3/5 fig. 3: rms on-state current versus case temper- ature. 1e-3 1e-2 1e-1 1 e+0 1e +1 1 e+2 1e +3 0.01 0.10 1.00 zth/rth zth (j-c) zt h( j-a) tp(s) fig. 4: relative variation of thermal impedance versus pulse duration. fig. 5: relative variation of gate trigger current and holding current versus junction temperature. fig. 6: non repetitive surge peak on-state current versus number of cycles. fig. 1: maximum rms power dissipation versus rms on-state current (f = 50hz).(curves are cut off by (di/dt)c limitation) fig. 2: correlation between maximum rms power dissipation and maximum allowable temperatures (tamb and tcase) for different thermal resistances heatsink + contact.
tpdv640 ---> tpdv1240 4/5 fig. 7: non repetitive surge peak on-state current for a sinusoidal pulse with width: t 10ms, and cor- responding value of i 2 t. fig. 8: on-state characteristics (maximum values). fig. 9: safe operating area.
tpdv640 ---> tpdv1240 5/5 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ordering type marking package weight base qty delivery mode tpdvx40 tpdvx40 top3 4.5 g 120 bulk n epoxy meets ul94,v0 n cooling method: c n recommended torque value: 0.8 m.n. n maximum torque value: 1 m.n. other information package mechanical data top3 (plastic) ref. dimensions millimeters inches min. max. min. max. a 4.4 4.6 0.173 0.181 b 1.45 1.55 0.057 0.061 c 14.35 15.60 0.565 0.614 d 0.5 0.7 0.020 0.028 e 2.7 2.9 0.106 0.114 f 15.8 16.5 0.622 0.650 g 20.4 21.1 0.815 0.831 h 15.1 15.5 0.594 0.610 j 5.4 5.65 0.213 0.222 k 3.4 3.65 0.134 0.144 l 4.08 4.17 0.161 0.164 p 1.20 1.40 0.047 0.055 r 4.60 typ. 0.181 typ.
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